The Oxford PlasmaPro 100 RIE modules provide anisotropic dry etching for a wide range of processes:

• Compatible with all wafer sizes up to 200 mm
• Quick changeover between wafer sizes
• Low cost of ownership and ease of service
• Excellent uniformity, high efficiency, and high precision processes
• In-situ chamber cleaning
• Wide temperature range electrode, -150°C to 400°C
• Etching processes for III-V group semiconductor devices
• InP etching for solid-state lasers
• GaAs/AlGaAs etching for VCSELs
• Low-damage GaN etching for RF device applications
• Diamond-like Carbon (DLC) coating
• Etching of SiO2 and quartz