The Oxford ICPCVD process module is designed to produce high-quality films at low deposition temperatures using high-density remote plasma technology, ensuring superior film quality with minimal substrate damage.

• Excellent uniformity, high throughput, and high precision processes
• High-quality films
• Broad temperature range electrode
• Compatible with all wafer sizes up to 200 mm
• Quick changeover between wafer sizes
• Low cost of ownership and easy maintenance
• Compact size, flexible layout
• Resilient heated electrodes with capability up to 400°C or 1200°C
• In-situ chamber cleaning
• Flexible vapor delivery module for coating films using liquid precursors, e.g., TiO2 using TTIP, SiO2 using TEOS.