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Oxford PlasmaPro100 Cobra ICP RIE

Oxford PlasmaPro100 Cobra ICP RIE

Oxford PlasmaPro100 Cobra ICP RIE

Category: OXFORD ICPETCH

The Oxford PlasmaPro 100 Cobra ICP Etch utilizes high-density plasma to achieve rapid etch and deposition rates. Its process modules offer excellent uniformity, high efficiency, high precision, and low-damage processes for wafer sizes up to 200 mm.

Our systems are highly preferred for high-volume production (HVM) with enhanced process solutions. The PlasmaPro 100 Cobra is used across a broad range of technologies, including MEMS and sensors, GaAs and InP laser optoelectronics, SiC and GaN power electronics, and RF applications.

  • Wide temperature range electrode, -150°C to 400°C
  • Compatible with all wafer sizes up to 200 mm
  • Quick changeover between wafer sizes
  • Low cost of ownership and ease of service
  • Compact size, flexible layout
  • In-situ chamber cleaning

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