Features of MDPmap

Sensitivity: Highest precision for visualizing imperceptible defects and investigating epitaxial layers.

Measurement speed: < 5 minutes for 6-inch Si wafers, 1 mm resolution.

Lifetime range: 20 ns to several ms.

Pollution determination: Metal (Fe) contamination from crucibles and equipment.

Measurement capability: From diced wafers to fully processed samples.

Flexibility: Fixed measurement head allows external lasers to be triggered.

Reliability: Modular and compact tabletop device for higher reliability and uptime > 99%.

Repeatability: > 99%.

Sheet resistance: Mapping without frequent calibration.

Configuration options

• Spot size variation
• Resistivity measurement (wafers)
• Sheet resistance
• Background/Bias light
• Reflection measurement (MDP)
• LBIC for solar cells
• BiasMDP
• Reference wafer
• Internal/External iron mapping of Si
• Integrated heating stage
• Wide range of lasers