Fundamental Research and Development on Semiconductor Materials

• Sensitivity: Highest sensitivity for electrical defect characterization
• Temperature range: From liquid nitrogen (77 K) up to 500 K. Optional: liquid helium (4 K) or higher temperatures
• Decay constants range: 20 ns to several ms
• Contamination detection: Measurement of basic trap level properties: activation energy and capture cross-section of traps, temperature-dependent and injection-dependent lifetime measurements
• Repeatability: > 99%, Measurement time: < 60 minutes. Liquid nitrogen consumption: 2 liters per operation
• Flexibility: Choose from different wavelengths ranging from 365 nm to 1480 nm for different types of materials
• Accessibility: IP-based system allows remote operation and technical support from anywhere in the world

With the newly commercially available MD-PICTS equipment, it is possible to measure the temperature dependence of transient photoconductivity in the range of 20…500 K. In the past, semiconductors such as Si, GaAs, InP, SiC, and many others have been successfully investigated using this method.