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Lifetime Measurement Device for Single and Multicrystalline Wafers and Bricks

Used for routine quality control, sophisticated material research and development.

Materials: Si | Compound Semiconductors | Oxides | Wide bandgap materials | Perovskites | Epitaxial layers

[ CdTe | InP | ZnS | SiC | GaAs | GaN | ]

Non-contact and non-destructive lifetime imaging (μPCD/MDP (QSS)), photoconductivity, specific resistance, and p/n control according to SEMI PV9-1110 standards.

Applications: Wafer cutting, Furnace monitoring, Material optimization, and more.

Best efficiency: >240 Bricks/day or >720 wafers/day

Measurement speed: <4 minutes for a standard 156 x 156 x 400 mm Brick

Efficiency improvement: 1 mm cutting criterion for a standard 156 x 156 x 400 mm Brick

Quality Control: Designed for monitoring processes and materials such as mono or multicrystalline silicon.

Contamination determination: Metal (Fe) contamination from crucibles and equipment.

Reliability: Modular and durable industrial device for higher reliability and uptime >99%.

Repeatability: >99%

Specific Resistance: Specific resistance mapping without frequent calibration.

Configuration Options

• Point size variation
• Resistance measurement (Brick/Wafer)
• Background/Bias light
• Reflectance measurement (MDP)
• LBIC (Light Beam Induced Current)
• BiasMDP
• LBIC for solar cells
• LBIC with contacted BiasMDP measurement stage
• Reference Wafer
• Resistance calibration set (Brick/Wafer)
• Internal Iron (Fe) mapping of Si
• P/N detection
• Barcode reader
• Wide laser range